发明名称 |
ETCHING APPARATUS, ANALYSIS APPARATUS, ETCHING TREATMENT METHOD, AND ETCHING TREATMENT PROGRAM |
摘要 |
There is provided an etching apparatus in which, without setting the information of the substance and the chemical reaction, a small number of representative wavelengths can be selected from a waveform at a lot of wavelengths, and an analysis process of etching data which needs large man-hours can be eliminated to efficiently set the monitoring of the etching. The etching apparatus includes: a lot/wafer/step-depending OES-data searching/acquiring function 511 for acquiring a plurality of optical emission intensity waveforms along an etching-treatment time axis; a waveform-change-existence judgment function 521 for judging the existence of the change of the plurality of light emission intensity waveforms; a waveform-correlation-matrix calculating function 522 for calculating a correlation matrix between the optical emission intensity waveforms; a waveform classifying function 523 for classifying the optical emission intensity waveforms into groups; and a representative-waveform selecting function 524 for selecting a representative optical emission intensity waveform from the group. |
申请公布号 |
US2011315661(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US200913144097 |
申请日期 |
2009.11.20 |
申请人 |
MORISAWA TOSHIHIRO;SHIRAISHI DAISUKE;INOUE SATOMI |
发明人 |
MORISAWA TOSHIHIRO;SHIRAISHI DAISUKE;INOUE SATOMI |
分类号 |
C23F1/00;C23F1/08;G01J3/28 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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