| 摘要 |
A power semiconductor component and a method for the production of a power semiconductor component are disclosed. According to one embodiment of the invention, a topmost metallization region that is provided is formed in a manner extended laterally and outside contacts formed, in such a way that, as a result, a protection and sealing material region to be provided is formed, whilst avoiding electrically insulating additional protection and sealing layers that are usually to be provided. |
