| 摘要 |
A power semiconductor device comprises: a high-voltage side switching element and a low-voltage side switching element which are totem-pole-connected in that order from a high-voltage side between a high-voltage side potential and a low-voltage side potential; a high-voltage side drive circuit that drives the high-voltage side switching element; a low-voltage side drive circuit that drives the low-voltage side switching element; a capacitor which has a first end connected to a connection point between the high-voltage side switching element and the low-voltage side switching element and a second end connected to a power supply terminal of the high-voltage side drive circuit and supplies a drive voltage to the high-voltage side drive circuit; and a diode which has an anode connected to a power supply and a cathode connected to the second end of the capacitor and supplies a current from the power supply to the second end of the capacitor, wherein the diode includes a P-type semiconductor substrate, an N-type cathode region on a surface of the P-type semiconductor substrate, a P-type anode region in the N-type cathode region, a P-type contact region and an N-type contact region in the P-type anode region, a cathode electrode connected to the N-type cathode region, and an anode electrode connected to the P-type contact region and the N-type contact region. |
