| 摘要 |
PROBLEM TO BE SOLVED: To obtain a novel light absorbing crosslinked composition suitable for use as an antireflection composition and particularly suitable for forming an image with a short wavelength as 193 nm. SOLUTION: A layer of an antireflection composition containing a resin binder having phenyl groups is disposed on a substrate and cured. A layer of a photoresist composition is disposed on the cured layer, exposed with activating radiation and developed to form a photoresist relief image. In this method, the ARCs are employed together with the overcoated resin layer using the ARCs as a base layer, contain a novel ARC resin binder in general, and effectively absorb reflected exposure radiation of <200 nm wavelength. |
