| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of designing a semiconductor device in which deterioration in reliability of a transistor in a circuit block constituting the semiconductor device is taken into account. <P>SOLUTION: A deterioration with time calculation unit 11 calculates circuit operation characteristics (first characteristics) after deterioration by changing a circuit constant of one of a plurality of transistors by using a net list (circuit description file 101) of a circuit constituted of a plurality of transistors and design information 102. An analysis unit 12 decides whether there is an inflection point in the first characteristics or not, and determines a circuit constant corresponding to the inflection point as a corrected constant if there is inflection point. Otherwise, the deterioration with time calculation unit 11 further calculates circuit operation characteristics (second characteristics) before deterioration, and the analysis unit 12 decides a corrected constant based on the first and second characteristics. The analysis unit 12 corrects the circuit constant of one transistor in the net list to the corrected constant and forms a corrected circuit description file 103. <P>COPYRIGHT: (C)2012,JPO&INPIT |
