| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent increase in power consumption by using a complementary logic circuit capable of reducing penetration current and to provide a semiconductor device which can prevent heat generation by using a complementary logic circuit capable of reducing penetration current. <P>SOLUTION: In addition to an ordinary gate electrode, an n-channel transistor or a p-channel transistor provided with a second gate electrode for controlling threshold voltage is used in a complementary logic circuit. An insulation gate field effect transistor off current of which is extremely small is used as a switching element to control potential of the second gate electrode. A transistor functioning as the switching element includes a semiconductor material with a wider bandgap than a silicon semiconductor and lower intrinsic carrier density than silicon in a channel forming region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
