发明名称 Contact pad supporting structure and integrated circuit for crack suppresion
摘要 The invention provides a contact pad supporting structure. The contact pad supporting structure includes an underlying first conductive plate and an overlying second conductive plate, wherein the first and second conductive plates are separated by a first dielectric layer. A plurality of circular ring-shaped via plug groups comprising a plurality of circular ring-shaped via plugs is through the first dielectric layer, electrically connecting to the first and second conductive plates. All of the circular ring-shaped via plugs of each of the circular ring-shaped via plug groups are disorderly arranged.
申请公布号 US8080881(B2) 申请公布日期 2011.12.20
申请号 US20090431636 申请日期 2009.04.28
申请人 TSAO SHENG-HSIUNG;LIN YUNG-LUNG;HUANG YUN-LUNG;VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 发明人 TSAO SHENG-HSIUNG;LIN YUNG-LUNG;HUANG YUN-LUNG
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
代理机构 代理人
主权项
地址