CMOS POWER AMPLIFIER AND TEMPERATURE COMPENSATION CIRCUIT OF THE SAME
摘要
PURPOSE: A complementary metal oxide silicon(CMOS) power amplification apparatus and a temperature compensation circuit thereof are provided to compensate gate bias voltage according to a class type of a CMOS power amplifier, thereby performing a power amplification process in a normal operation range. CONSTITUTION: A bias circuit part(210) supplies gate bias voltage of a power amplification circuit part. A bias detection part(220) determines a class type of the power amplification circuit part according to the gate bias voltage. A temperature detection part(230) detects temperature proportion voltage proportional to an ambient temperature. A temperature compensation control part(240) creates a compensation control value according to the temperature proportion voltage in the class type determined in the bias detection part. A transform part(250) provides a transformed value to the bias detection part by transforming the compensation control value into a linear bias control value.
申请公布号
KR20110135565(A)
申请公布日期
2011.12.19
申请号
KR20100055370
申请日期
2010.06.11
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
KIM, YOO HWAN;YOO, HYUN HWAN;NA, YOO SAM;JO, BYEONG HAK