发明名称 CMOS POWER AMPLIFIER AND TEMPERATURE COMPENSATION CIRCUIT OF THE SAME
摘要 PURPOSE: A complementary metal oxide silicon(CMOS) power amplification apparatus and a temperature compensation circuit thereof are provided to compensate gate bias voltage according to a class type of a CMOS power amplifier, thereby performing a power amplification process in a normal operation range. CONSTITUTION: A bias circuit part(210) supplies gate bias voltage of a power amplification circuit part. A bias detection part(220) determines a class type of the power amplification circuit part according to the gate bias voltage. A temperature detection part(230) detects temperature proportion voltage proportional to an ambient temperature. A temperature compensation control part(240) creates a compensation control value according to the temperature proportion voltage in the class type determined in the bias detection part. A transform part(250) provides a transformed value to the bias detection part by transforming the compensation control value into a linear bias control value.
申请公布号 KR20110135565(A) 申请公布日期 2011.12.19
申请号 KR20100055370 申请日期 2010.06.11
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM, YOO HWAN;YOO, HYUN HWAN;NA, YOO SAM;JO, BYEONG HAK
分类号 H03F1/30;H03F3/20 主分类号 H03F1/30
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