| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of preventing the occurrence of solder cracks under an insulating substrate and warpage of a heat sink by reducing the thickness of the heat sink. <P>SOLUTION: The power semiconductor device comprises an insulating substrate 2 on which a power semiconductor element 1 is mounted, and a heat sink 3 mounting the insulating substrate 2 via solder 5, forming a metal layer. In the heat sink 3, the thickness of a first region mounting the insulating substrate 2 is thinner than that of a second region not mounting the insulating substrate 2, which surrounds the first region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
