| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a lamination wafer in which a low resistivity is maintained by suppressing sucking-out which is caused by oxidation or outward dispersion of dopant, relating to a method of manufacturing a lamination wafer which has a thin film of low resistivity that contains a dopant such as boron in high concentration, by an ion implantation peeling method. <P>SOLUTION: In a method of manufacturing a lamination wafer, an ion implantation layer is formed in a bond wafer, and the surface of a base wafer is laminated to the bond wafer. After the bond wafer is released in the ion implantation layer, a flattening process is performed on a released surface. As the bond wafer, a silicon single crystal wafer whose resistivity in the region of forming the ion implantation layer is 0.2 Ωcm or less is used. The ion implantation layer is formed in such manner as ion dosage to form the ion implantation layer is 4×10<SP POS="POST">16</SP>/cm<SP POS="POST">2</SP>or less. The flattening process on the released surface is performed under thermal treatment in the atmosphere containing HCl gas. <P>COPYRIGHT: (C)2012,JPO&INPIT |
