NONVOLATILE MEMORY ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND MEMORY MODULE AND SYSTEM HAVING NONVOLATILE MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory element, a method for manufacturing the same, and a memory module and system having the element.

SOLUTION: A nonvolatile memory element in which a striation phenomenon is prevented comprises: a substrate; a channel layer projected from the substrate; a gate conductive layer surrounding the channel layer; a gate insulation layer located between the channel layer and the gate conductive layer; and a first insulation layer located above and below the gate conductive layer, the first insulation layer being spaced apart from the channel layer. The gate insulation layer extends between the gate conductive layer and the first insulation layer.

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