发明名称 |
BURIED LOW-RESISTANCE METAL WORD LINES FOR CROSS-POINT VARIABLE-RESISTANCE MATERIAL MEMORIES |
摘要 |
<p>Variable-resistance material memories include a buried salicide word line disposed below a diode. Variable-resistance material memories include a metal spacer spaced apart and next to the diode. Processes include the formation of one of the buried salicide word line and the metal spacer. Devices include the variable-resistance material memories and one of the buried salicided word line and the spacer word line.</p> |
申请公布号 |
EP2191509(A4) |
申请公布日期 |
2011.12.07 |
申请号 |
EP20080832147 |
申请日期 |
2008.09.18 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LIU, JUN;VIOLETTE, MICHAEL P. |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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