METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for forming the capacitor of a semiconductor device is provided to reduce a leakage current by controlling the formation of a metal silicide at the side wall of a storage node electrode. CONSTITUTION: A first insulating layer(108) is formed on an inter-layer insulating film(102) in which a contact plug(104) is formed. The first insulating layer is etched and an opening is formed. A sacrificial nitride layer is formed on the surface of the opening. A metal layer is formed on the surface of the opening. A metal silicide layer(118) is formed on the lower surface of the opening. A conductive film(120) is formed on the surface of the opening.