| 摘要 |
In an embodiment, a method of fabricating a polycrystalline diamond compact includes forming an assembly including an at least partially leached polycrystalline diamond table that includes a plurality of interstitial regions therein and a surface; at least one silicon-containing layer positioned adjacent to the surface of the at least partially leached polycrystalline diamond table; and a substrate positioned at least proximate to the at least partially leached polycrystalline diamond table. The method further includes subjecting the assembly to a high-pressure/high-temperature process; at least partially infiltrating the at least partially leached polycrystalline diamond table with the at least one silicon-containing layer, in response to the high-pressure/high-temperature process, to form an at least partially infiltrated polycrystalline diamond table that bonds to the substrate; and exposing the at least partially infiltrated polycrystalline diamond table to an acid such that at least a thermal stability thereof is enhanced. |
