| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a transistor which has stable characteristics, and to provide a semiconductor device that suppresses variance in characteristics among a plurality of vertical transistors, and a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes a second groove 26 sectioned by an internal surface formed by partially etching a surface 11a of a semiconductor substrate 11 and including first and second side faces 26a and 26b as vertical wall surfaces, a gate insulating film 32 covering the first and second side faces 26a and 26b of the second groove 26, a gate electrode 33 comprising a first conductive film 34 formed on the gate insulating film 32 and having upper end surfaces 37a and 38a below the surface 11a of the semiconductor substrate 11 and a second conductive film 35 formed on the first conductive film 34 and having an upper end surface 35a below an upper end surface 34a of the first conductive film 34, and a first insulating film 17 disposed in the second groove 26 below the surface 11a of the semiconductor substrate 11, and covering the upper end surface 35a of the second conductive film 35. <P>COPYRIGHT: (C)2012,JPO&INPIT |
