| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the operation property of a device by increasing a contact area between a plate electrode and a metal contact to reduce a sensing noise and improve a process margin. CONSTITUTION: A storage electrode(105) is formed on the upper side of a semiconductor substrate(100) in a cell area. A first plate electrode(115) is formed on the upper side of the semiconductor substrate including the storage electrode in the cell area. A first insulation layer(120) is formed on the side of the first plate electrode to expose the upper side of the first plate electrode. A second plate electrode(125) is formed on the surface of the first plate electrode and the first insulation layer. A contact plug(135) is connected to the second plate electrode on the upper side of the first insulation layer.</p> |
