发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing the width of a guard ring region without requiring decrease in the number of guard rings nor reduction in depth of the guard ring, nor requiring a step for forming the guard ring which is complicated and takes time. <P>SOLUTION: A guard ring 124 is formed by selectively introducing a lot of p-type impurities into a guard ring region GR of a semiconductor base body 110 from above an n-type impurity diffusion region 120 through a second mask M1, and then causing the p-type impurities to be thermally dispersed inside the semiconductor base body 110 so that a p-type impurity diffusion region 122 is formed in the n-type impurity diffusion region 120 when viewed from above, as well as in a portion deeper than the lower surface of the n-type impurity diffusion region 120 in cross section. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011238899(A) |
申请公布日期 |
2011.11.24 |
申请号 |
JP20110035949 |
申请日期 |
2011.02.22 |
申请人 |
SHINDENGEN ELECTRIC MFG CO LTD |
发明人 |
WATANABE YUJI;FUKUI MASANORI;MIYAKOSHI YOSHIKI |
分类号 |
H01L29/06;H01L21/336;H01L29/739;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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