| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering method which can improve embedding properties when a metallic material is embedded in recessed parts by a single sputtering apparatus, and to provide a sputtering apparatus used for the sputtering method. <P>SOLUTION: In the sputtering method, a metallic material is embedded into the recessed parts of a substrate S. The method includes: a first step of performing sputtering to a target 18 while applying bias voltage to the substrate S; and a second step of performing sputtering to the target in a state where bias voltage is not applied to the substrate S. The first step and the second step are successively performed within a vacuum tank 11. In the first step, the target 18 is sputtered under the pressure in which metallic particles released from the target 18 and charged particles in plasma are collided to produce metallic particles with charges, and the metallic particles with the charges are attracted toward the insides of the recessed parts by bias voltage. In the second step, the temperature of the substrate S is made higher than that in the first step so as to flow the metallic particles stuck to the substrate S into the recessed parts, and the target 18 is subjected to sputtering. <P>COPYRIGHT: (C)2012,JPO&INPIT |
