发明名称 BONDING FILM-ATTACHED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a bonding film-attached substrate for reliably substrates even if they are the ones whose main component is not silicon dioxide (SiO<SB>2</SB>), or that does not have an Si-group skelton, or when one substrate is bonded with the other substrate whose main component is not silicon dioxide (SiO<SB>2</SB>) or that does not have an Si-group skelton, and to provide a method of manufacturing the same. <P>SOLUTION: The bonding film-attached substrate includes: an IR absorption glass member 2 whose main component is not silicon dioxide, or that does not have the Si-group skeleton; a silicon oxide film 6 that is formed on a surface of the IR absorption glass member 2 adjacent to the substrate using a vapor-phase deposition method, and that has a thickness of 100-2,000 nm; and a bonding film 7 provided by plasma polymerization on the silicon oxide film 6. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011235626(A) 申请公布日期 2011.11.24
申请号 JP20100259548 申请日期 2010.11.19
申请人 SEIKO EPSON CORP 发明人 UEHARA TAKEHIKO;MATSUZAKI FUMITAKE;MIYAHARA MITSURU
分类号 B32B9/00;B32B27/00;C09J183/06;G02B5/30 主分类号 B32B9/00
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