发明名称 |
DIRECTIONAL SOLID PHASE CRYSTALLIZATION OF THIN AMORPHOUS SILICON FOR SOLAR CELL APPLICATIONS |
摘要 |
Embodiments of the invention provide a system for heat treating a substrate which includes a first processing chamber having a first processing region coupled with a precursor source assembly configured to deliver a silicon containing gas to an upper surface of a substrate disposed within the first processing region in order to form an amorphous silicon film on the upper surface. The system further includes a substrate support having a heating element configured to heat the substrate to a temperature sufficient to crystallize the amorphous silicon film by solid phase crystallization and to create a temperature gradient in which a temperature at the lower surface of the substrate is greater than a temperature at the upper surface of the amorphous silicon film and the temperature gradient is within a range from about 2° C. to about 10° C.
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申请公布号 |
US2011277682(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
US201113184295 |
申请日期 |
2011.07.15 |
申请人 |
RANA VIRNEDRA V.;BACHRACH ROBERT Z. |
发明人 |
RANA VIRNEDRA V.;BACHRACH ROBERT Z. |
分类号 |
C30B1/06 |
主分类号 |
C30B1/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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