| 摘要 |
<p>PURPOSE: A method for forming electrodes for a chalcogenide containing device is provided to reduce the contamination of active switching materials of the device due to chemical elements by reducing or removing the diffusion of metal to a bulk of chalcogendie. CONSTITUTION: An electrode layer(18) is formed on a bottom electrode(20). A chalcogenide layer(16) is formed on the electrode layer. An electrode layer(14) is formed on the chalcogenide layer. A top electrode(12) is formed on the electrode layer. The electrode layer includes the mixture of metal and nonmetal.</p> |
