| 摘要 |
<p>A method for measuring a dimension of a pattern formed on a semiconductor light-exposure mask includes performing a preparation arranged to form a first relationship between measured values of dimensions of opaque patterns and misalignments of detected edge positions, and a second relationship between measured values of dimensions of clear patterns and misalignments of detected edge positions, performing detection/measurement arranged to detect opposite two edge positions of a measurement target pattern, and to measure a dimension of the measurement target pattern bounded by the two edge positions and dimensions of adjacent patterns respectively adjacent to the two edge positions, and performing correction arranged to respectively correct two detected edge positions of the measurement target pattern, with reference to one or both of the first and second relationships formed in the preparation, and measured values of the dimensions obtained in the detection/measurement.</p> |
