Semiconductor devices having redundant through-die vias and methods of fabricating the same

摘要

Semiconductor devices having redundant through-die vias (TDVs) and methods of fabricating the same are described. A substrate is provided having conductive interconnect formed on an active side thereof. Through die vias (TDVs) are formed in the substrate between a backside and the active side thereof. The TDVs include signal TDVs, redundant TDVs (i.e., redundant signal TDVs), and power supply TDVs. The signal TDVs are spaced apart from the redundant TDVs to form a pattern of TDV pairs. The power supply TDVs are interspersed among the TDV pairs. The conductive interconnect includes first signal conductors electrically coupling each of the signal TDVs to a respective one of the redundant TDVs defining a respective one of the TDV pairs.