发明名称 PLASMA PROCESSING EQUIPMENT USING PULSE DC POWER
摘要 PURPOSE: A plasma processing device using pulse DC power, which processes a surface process including etching, evaporating, and ashing by using a pulse dc power supplier is provided to improve operation stability including a pressure sensor part by reducing the electrical interference between elements in a chamber. CONSTITUTION: A plasma processing device using pulse DC power comprises a power electrode(120), a ground electrode(140) and a power supply unit(150). The ground electrode separates from the power electrode. The ground electrode electrically connects to and separates from a chamber. The ground electrode is a board shape, including multiple holes, a mesh shape or a sieve shape. The insulator is inserted between the power electrode and the ground electrodes. The ground electrode is arranged in around the power electrode. The power supply unit supplies pulse DC power to the power electrode.
申请公布号 KR20110123065(A) 申请公布日期 2011.11.14
申请号 KR20100042497 申请日期 2010.05.06
申请人 INJE UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION 发明人 LEE, JE WON;SOHN, KEUN YONG
分类号 C23F4/04;H01L21/3065;H05H1/24 主分类号 C23F4/04
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