发明名称 Resistor having parallel structure and method of fabricating the same
摘要 There are provided a resistor and a method of fabricating the same. More particularly, there are provided a resistor having a parallel structure capable of easily implementing a resistance value when forming a resistor directly on a wafer during a wafer process, and a method of fabricating the same. The resistor includes: a substrate; a lower resistant material layer formed on the upper portion of the substrate; an insulating layer to be stacked on the upper portion of the lower resistant material layer; an upper resistant material layer to be stacked on the upper portion of the insulating layer; and two penetration parts vertically penetrating through the insulating layer, wherein the penetration part is filled with a resistant material having the same component as that of the lower resistant material layer and the upper resistant material layer to electrically connect the upper resistant material layer to the lower resistant material layer.
申请公布号 US2011273266(A1) 申请公布日期 2011.11.10
申请号 US20100923574 申请日期 2010.09.28
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 PARK MI JIN;KWEON YOUNG DO;KIM JIN GU
分类号 H01C1/012;H01C17/06 主分类号 H01C1/012
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