| 摘要 |
<P>PROBLEM TO BE SOLVED: To correct dimension fluctuations due to developing loading effect and etching loading effect while correcting proximity effect. <P>SOLUTION: A drawing device 100 includes a storage device 142 inputting and storing a plurality of pattern dimension map data of different proximity effect densities, a selecting portion 10 selecting a group of a proximity effect correction coefficient where a dimension error of a pattern dimension in partial proximity effect density is corrected and the correction remainder occurs in the dimension error of the pattern dimension in remaining proximity effect density, and a reference irradiation amount when a map position is drawn by an irradiation amount obtained by an irradiation amount function at every map position, a correction term operating portion 16 operating a correction term for correcting correction remainder depending on the proximity effect density at every map position, an irradiation amount operating portion 18 operating the irradiation amount by using the selected group and the correction term at every map position and a drawing portion 150 drawing a desired pattern on a substrate by using electron beams of the obtained irradiation amount. <P>COPYRIGHT: (C)2012,JPO&INPIT |
