摘要 |
<p>#CMT# #/CMT# The circuit has multiple strands (U, V, W) with rectifying elements e.g. Schottky diodes (S1-S6), Trench MOS Barrier Schottky diode (TMBS), Trench Junction Barrier Schottky diode (TJBS) or field effect transistor, and protection elements i.e. Zener diodes (ZD1, ZD2, ZD4, ZD5), connected in parallel to the rectifying elements. The rectifying elements have low forward voltage. The protection elements have low breakdown voltage as the rectifying elements. Each rectifying element with each parallel connected protection element is integrated in a common semiconductor chip. #CMT#USE : #/CMT# Rectifier bridge circuit for a motor car generator (claimed). #CMT#ADVANTAGE : #/CMT# The protection elements are connected in parallel to the switched rectifying elements, so that tension strain and/or load dump strength is enhanced, thus reducing high thermal loss, and hence preventing destruction of the rectifying elements. The protection elements have low breakdown voltage, so that efficiency of a generator is increased. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic circuit diagram of a rectifier bridge circuit. B+ : Voltage S1-S6 : Schottky diodes U, V, W : Strands ZD1, ZD2, ZD4, ZD5 : Zener diodes.</p> |