| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal by which a silicon carbide single crystal ingot having good crystallinity is easily produced. <P>SOLUTION: The method for producing a silicon carbide single crystal includes supplying gaseous silicon carbide onto a silicon carbide seed crystal 2a to produce a silicon carbide single crystal ingot. A thin film 2b containing silicon and melting at a temperature lower than the temperature at which a silicon carbide single crystal is grown is formed on the crystal growth surface of the seed crystal 2a. The seed crystal 2a on which the thin film 2b is formed is subjected to thin film heating treatment. Thereby, the thin film 2b formed on the surface of the silicon carbide seed crystal 2a is melted, and a melt layer 6 is formed in at least whole crystal growth surface of the seed crystal 2a, and an uppermost surface brought into contact with the melt layer 6, of the silicon carbide seed crystal 2a is eluted in the melt layer 6. Consequently, since a damaged crystal layer 5 remaining in the uppermost layer of the seed crystal 2a is etched, and a high quality surface free from crystal damage of the seed crystal 2a is exposed, the surface having reduced defects of the seed crystal 2a becomes a crystal growth surface, and a high quality silicon carbide single crystal ingot is obtained. <P>COPYRIGHT: (C)2012,JPO&INPIT |
