| 发明名称 |
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLANTATION AT A TILT ANGLE IN EXPOSED REGIONS |
| 摘要 |
A method of fabricating a semiconductor device includes forming a mask pattern for defining a region of a semiconductor substrate. An impurity layer for suppressing punch-through will be formed in the defined region. Dopant ions are implanted into the defined region of the semiconductor substrate at a tilt angle of approximately 4.4° to 7°.
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| 申请公布号 |
US2011275204(A1) |
申请公布日期 |
2011.11.10 |
| 申请号 |
US201113186309 |
申请日期 |
2011.07.19 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE MIN YONG;JUNG YONG SOO |
| 分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
| 代理机构 |
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代理人 |
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| 主权项 |
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