| 摘要 |
PURPOSE: A semiconductor memory device is provided to detect an error due to a redundancy operation by including a redundancy operation validation unit. CONSTITUTION: In a semiconductor memory device, a redundancy operation signal generator generates a redundancy operation entry control signal and a repair address signal. A redundancy operation validation part(240) generates a redundancy operation validation signal. A repair address generating unit(200) respectively decides each bit value of the repair address signal. The redundancy operation entry control signal generator(220) decides the value of the redundancy operation entry control signal. An address mixing portion(242) mixes a plurality of bit values including a test enable signal and a repair address signal. The entry control mixing portion(244) mixes the test enable emptiness and the redundancy operation entry control signal The redundancy operation validation signal determination unit(246) decides the value of the redundancy operation validation signal.
|
