发明名称 |
METHOD AND SYSTEM FOR FRACTURING A PATTERN, AND FOR CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES |
摘要 |
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction using a plurality of exposure passes is disclosed. In one embodiment, base dosages for the plurality of exposure passes are different from each other. In another embodiment, the union of shots from one of the exposure passes is different than the union of shots from a different exposure pass. In a further embodiment, the sum of the base dosage levels for the plurality of exposure passes does not equal a normal dosage. Similar methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed. |
申请公布号 |
WO2011078968(A3) |
申请公布日期 |
2011.11.03 |
申请号 |
WO2010US59345 |
申请日期 |
2010.12.07 |
申请人 |
D2S, INC.;ZABLE, HAROLD ROBERT;FUJIMURA, AKIRA |
发明人 |
ZABLE, HAROLD ROBERT;FUJIMURA, AKIRA |
分类号 |
H01J37/317;G03F1/14;G03F7/20 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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