发明名称 Wafer stacked package waving bertical heat emission path and method of fabricating the same
摘要 A wafer stacked semiconductor package (WSP) having a vertical heat emission path and a method of fabricating the same are provided. The WSP comprises a substrate on which semiconductor chips are mounted; a plurality of semiconductor chips stacked vertically on the substrate; a cooling through-hole formed vertically in the plurality of semiconductor chips, and sealed; micro holes formed on the circumference of the cooling through-hole; and coolant filling the inside of the cooling through-hole. Accordingly, the WSP reduces a temperature difference between the semiconductor chips and quickly dissipates the heat generated by the stacked semiconductor chips.
申请公布号 US8049329(B2) 申请公布日期 2011.11.01
申请号 US20090581920 申请日期 2009.10.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAEK JOONG-HYUN;LEE HEE-JIN
分类号 H01L23/34 主分类号 H01L23/34
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