发明名称 DECOUPLING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 A decoupling circuit includes an inverter. The inverter includes i (i is an integer of 1 or more) PMOS transistors each having a first gate electrode, and j (j is an integer of 0 or more) PMOS transistors each having a second gate electrode. The inverter includes m (m is an integer of 1 or more) NMOS transistors each having a third gate electrode, and n (n is an integer of 0 or more) NMOS transistors each having a fourth gate electrode. The first to fourth gate electrodes are coupled to an input end of the inverter. A total area of the first and second gate electrodes is different from a total area of the third and fourth gate electrodes.
申请公布号 US2011260784(A1) 申请公布日期 2011.10.27
申请号 US201113089253 申请日期 2011.04.18
申请人 RENESAS ELECTRONICS CORPORATION 发明人 EIMITSU MASATOMO;SAEKI TAKANORI
分类号 G05F3/02 主分类号 G05F3/02
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