| 摘要 |
A method for forming a metal-semiconductor Schottky contact in a well region is provided. The method includes forming a first insulating layer overlying a shallow trench isolation in the well region; and removing a portion of the first insulating layer such that only the well region and a portion of the shallow trench isolation is covered by a remaining portion of the first insulating layer. The method further includes forming a second insulating layer overlying the remaining portion of the first insulating layer and using a contact mask, forming a contact opening in the second insulating layer and the remaining portion of the first insulating layer to expose a portion of the well region. The method further includes forming the metal-semiconductor Schottky contact in the exposed portion of the well region by forming a metal layer in the contact opening and annealing the metal layer.
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