| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element including a semiconductor layer with a low dislocation density and a high crystal quality, and having excellent light emitting efficiency.SOLUTION: The semiconductor light emitting element 10 includes: a substrate 11 having a large number of submicron-order fine concavities and convexities 11a on its surface; a mask layer 12 disposed to fill in and cover a part of the concavities of the large number of fine concavities and convexities 11a on the surface of the substrate 11; and a semiconductor layer 13 formed on the substrate 11 by crystal growth starting from the remaining regions of the fine concavities and convexities 11a not covered with the mask layer 12 on the surface of the substrate 11. A difference in refractive index between the mask layer 12 and the semiconductor layer 13 is smaller than a difference in refractive index between the mask layer 12 and the substrate 11. |
