发明名称 |
Processing of multilayer semiconductor wafers |
摘要 |
<p>A method and apparatus for machining, or forming a feature in, a patterned silicon wafer includes removing portions of surface layers on the wafer using a first pulsed laser (4) beam with a pulse width between 1 ps and 1000 ps; and removing portions of bulk silicon (1) underlying the surface layers from the wafer using a second pulsed laser (5) beam with a wavelength between 200 nm and 1100 nm. Re-deposited silicon may be removed from the wafer by etching.</p> |
申请公布号 |
GB2458475(B) |
申请公布日期 |
2011.10.26 |
申请号 |
GB20080005037 |
申请日期 |
2008.03.18 |
申请人 |
XSIL TECHNOLOGY LIMITED;ELECTRO SCIENTIFIC INDUSTRIES, INC. |
发明人 |
ADRIAN BOYLE;NIALL BRENNAN;JOSEPH CALLAGHAN;ALEKSEJ RODIN |
分类号 |
H01L21/768;B23K26/00;B23K26/36 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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