MULTI-PORT MEMORY HAVING A VARIABLE NUMBER OF USED WRITE PORTS

摘要

A multi-port memory (10) is operated according to a method. Data is written, in a first mode, to a storage node (24) of a memory cell from a first port (bit line 1) through a first conductance (36). The first mode is characterized by a power supply voltage being applied at a power node (VDD) at a first level. Data is written, in a second mode, to the storage node of the memory cell simultaneously from the first port through the first conductance and a second port (bit line 0) through a second conductance (40). The second mode is characterized by the power supply voltage being applied at the power node (VDD) at a second level different from the first level.