| 摘要 |
A Phase Change Memory (PCM) having double write drivers. A PCM apparatus includes a memory array having a bitline with a first end and a second end for accessing a PCM cell coupled to the bitline between the first end and the second end of the bitline, a first write driver and a second write driver coupled to the first end of the bitline and the second end of the bitline respectively for simultaneously supplying current to the PCM cell when writing to the PCM cell, and a sense amplifier coupled to the second end of the bitline for sensing a resistance of the PCM cell when reading from the PCM cell. Embodiments of the present invention provide apparatuses, methods, and systems having reduced writing current requirements.
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