METHOD FOR IMPROVING DEVICE PERFORMANCE USING EPITAXIALLY GROWN SILICON CARBON (SiC) OR SILICON-GERMANIUM (SiGe)

摘要

A semiconductor substrate including a field effect transistor (FET) and a method of producing the same wherein a stressor is provided in a recess before the source/drain region is formed. The device has an increased carrier mobility in the channel region adjacent to the gate electrode.