INSULATED GATE BIPOLAR TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To solve the problem of current density reduction due to reduction of the area ratio of the main cell in conventional IGBTs, even though accumulation quantity of holes is maintained by aggressively reducing the area ratio of the main cell and suppressing the quantity of holes discharged to the emitter side, and conductivity modulation of a base layer is promoted.SOLUTION: In an IGBT having a trench cell, base regions are separated in the extending direction of the trench gate such that base regions are disposed in the direction that orthogonally intersects the extending direction of the trench gate. A planar gate is disposed on the drift layer surface between the separated base regions. The gate electrode of the planar gate and the gate electrode of the trench gate are connected on the trench gate.