| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion film stack-type solid imaging device for obtaining a high-quality picked-up image signal.SOLUTION: The photoelectric conversion film stack-type solid-state imaging device includes: a semiconductor substrate 110 having a signal reader formed on a surface; a photoelectric conversion layer stacked above a surface of the semiconductor substrate 110 and having a photoelectric conversion film 103 formed between a first electrode film 104 and a plurality of second electrode films 113 divided for each pixel; a first light transmission layer 120 stacked above a light incidence side of the photoelectric conversion layer and formed of a material that transmits light; and a light-shielding film 121 formed in the same layer level as the first light transmission layer 120 and covering an outside of an effective pixel region 101. |
