发明名称 THIN-FILM ELECTRODE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a new-concept ohmic contact system with excellent electrical, optical, thermal and structural features, to increase an effective carrier density, to reduce a Schottky barrier by adjusting an energy bandgap between substances, and high in permeability.SOLUTION: A thin-film electrode forms an ohmic contact in a light emitting diode or in a laser diode. The thin-film electrode includes a first electrode layer laminated on a p-type gallium nitride layer and containing an Ni-X solid solution, and a second electrode layer laminated on the first electrode layer and containing at least one element selected from a group of Au, Pt, Pd, Ni, Ru, Rh, Re, C, Cu and Ir.
申请公布号 JP2011199319(A) 申请公布日期 2011.10.06
申请号 JP20110143316 申请日期 2011.06.28
申请人 SAMSUNG LED CO LTD;KWANGJU INST OF SCIENCE & TECHNOL 发明人 SONG JUNE-O;LEEM DONG-SUK;SEONG TAE-YEON
分类号 H01L21/28;H01L33/40;H01L21/285;H01L33/30;H01L33/32;H01S5/042;H01S5/30;H01S5/323 主分类号 H01L21/28
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