<p>The disclosed semiconductor device contains: a semiconductor layer having a first conductivity type; a plurality of body regions that have a second conductivity type and that are formed at intervals at the surface layer of the aforementioned semiconductor layer; a source region that has the first conductivity type and that is formed at the surface layer of each of the aforementioned body regions; a gate insulating film that is provided on the aforementioned semiconductor layer and that straddles between adjacent of the aforementioned body regions; a gate electrode that is provided on the aforementioned gate insulating film and that faces the aforementioned body regions; and an electric field moderating section that is provided between adjacent of the aforementioned body regions and that moderates the electric field arising at the aforementioned gate insulating film.</p>
