| 摘要 |
PROBLEM TO BE SOLVED: To provide photoelectric conversion element having a high conversion efficiency and improve in adhesion between an Mo electrode and a photoelectric conversion semiconductor layer.SOLUTION: The photoelectric conversion element 1 includes the Mo electrode 20, an MoSlayer 80 provided by sulfurizing a surface on the Mo electrode 20, and the photoelectric conversion semiconductor layer 30 containing S provided on the MoSlayer 80 after forming the MoSlayer 80. Alternatively, the photoelectric conversion element 1 includes the Mo electrode 20, an MoSelayer 80 provided by selenizing the surface on the Mo electrode 20, and the photoelectric conversion semiconductor layer 30 containing Se provided on the MoSelayer 80 after forming the MoSelayer 80, wherein the layer thickness of the MoSelayer 80 is 10-50 nm. |
