SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that has an insulating layer with a low dielectric constant and a superior adhesion with metals, and to provide its manufacturing method.SOLUTION: The semiconductor device includes: a substrate (silicon substrate); a porous SiOCH film 12b provided on the substrate, and having a carbon-carbon coupling and the ratio (C/Si) of the number of carbon atoms to the number of silicon atoms not less than two; a recess provided to the porous SiOCH film 12b; a metal film(Cu film 22b) provided so as to plug the recess; and a modifying layer 31b contacting with a Cu film 22b and provided on the surface of the porous SiOCH film 12b in the recess. The modifying layer 31b has a small C/Si ratio and an equivalent O/Si ratio comparing to the inside of the porous SiOCH film 12b.