DUAL CARRIER FOR JOINING IC DIE OR WAFERS TO TSV WAFERS

摘要

A method of forming stacked electronic articles using a through substrate via (TSV) wafer includes mounting a first carrier wafer (205) to a top side of the TSV wafer (202) using a first adhesive material (206) that has a first debonding temperature. The TSV wafer is thinned from a bottom side of the TSV wafer to form a thinned TSV wafer (202'). A second carrier wafer (215) is mounted to the bottom side of the TSV wafer (202') using a second adhesive material (207) that has a second debonding temperature that is higher than the first debonding temperature. The thinned TSV wafer (202') is heated to a temperature above the first debonding temperature to remove the first carrier wafer (205) from the thinned TSV wafer (202'). At least one singulated IC die is bonded to TSV die formed on the top surface of the thinned TSV wafer to form the stacked electronic article.