| 摘要 |
A solid-state imaging device includes a pixel array section which includes a plurality of pixels arranged in a two-dimensional manner, and a vertical scanning circuit which successively performs selection and scanning for a plurality of rows of the pixel array section. Each of the pixels includes a photoelectric conversion element, a transfer transistor which transfers a signal charge of the photoelectric conversion element to a detecting section, a reset transistor which sets a voltage of the detecting section to a voltage of a power supply terminal, and an amplifying transistor which amplifies and reads a signal charge of the detecting section. A first voltage which is lower than a power supply voltage is applied to the detecting section, in a charge-storage period of the photoelectric conversion element.
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