| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor that has high current driving force and high cutoff characteristics, and to provide a method of manufacturing the same. SOLUTION: The transistor 100 in one embodiment includes: a graphene film 10 which has a conductor region 10a and a semiconductor region 10b where atoms are bonded to a surface, and functions as a channel; and a gate electrode 12 formed on the graphene film 10 with a gate insulating film 11 interposed, wherein a tunnel current of a Schottky junction that is formed by the conductor region 10a and semiconductor region 10b is used for switching operation. COPYRIGHT: (C)2011,JPO&INPIT |
