发明名称 |
CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist composition featuring a high resolution, reduced line edge roughness, and a minimized variation of line width with changing temperature, and a pattern forming process using the same. <P>SOLUTION: The chemically amplified positive resist composition comprises a polymer (PB) comprising specific recurring units having an aromatic ring on a side chain and specific recurring units having a nitrogen atom on a side chain, and a polymer (PA) comprising specific recurring units having the sulfonium salt of a sulfonic acid on a side chain and recurring units having an acidic side chain protected with an acid decomposable protective group. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011191742(A) |
申请公布日期 |
2011.09.29 |
申请号 |
JP20110016377 |
申请日期 |
2011.01.28 |
申请人 |
SHIN-ETSU CHEMICAL CO LTD |
发明人 |
MASUNAGA KEIICHI;WATANABE SATOSHI;TANAKA HARUYORI;DOMON HIROMASA |
分类号 |
G03F7/039;C08F212/14;C08F212/32;C08F220/30;C08F220/38;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|