发明名称 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist composition featuring a high resolution, reduced line edge roughness, and a minimized variation of line width with changing temperature, and a pattern forming process using the same. <P>SOLUTION: The chemically amplified positive resist composition comprises a polymer (PB) comprising specific recurring units having an aromatic ring on a side chain and specific recurring units having a nitrogen atom on a side chain, and a polymer (PA) comprising specific recurring units having the sulfonium salt of a sulfonic acid on a side chain and recurring units having an acidic side chain protected with an acid decomposable protective group. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011191742(A) 申请公布日期 2011.09.29
申请号 JP20110016377 申请日期 2011.01.28
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 MASUNAGA KEIICHI;WATANABE SATOSHI;TANAKA HARUYORI;DOMON HIROMASA
分类号 G03F7/039;C08F212/14;C08F212/32;C08F220/30;C08F220/38;G03F7/004;H01L21/027 主分类号 G03F7/039
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