| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide technique for miniaturizing an exhaust gas treatment system which treats an exhaust gas discharged from a plasma CVD device for forming a silicon membrane used for a solar cell. <P>SOLUTION: This exhaust gas treatment system separates each gas of hydrogen and monosilane from a mixed gas containing the hydrogen and the monosilane discharged from the semiconductor manufacturing device 1 by membrane separation. A third component gas addition part 3 adds a third component gas to the mixed gas. A membrane separation part 5 includes a membrane which selectively allows the hydrogen to permeate, and separates the monosilane and hydrogen from the mixed gas to which the third component gas is added. Under this construction, the third component gas addition part 3 changes the addition amount of the third component according to the formula:ΔF=C<SB>1</SB>×ΔA, C<SB>1</SB>≥0.3. Here,ΔA is the extent of decrease (%) in the hydrogen recovery rate; andΔF is the extent of decrease (L/min) in the addition amount of the third component gas. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
